vishay IL400 document number 83626 rev. 1.4, 26-apr-04 vishay semiconductors www.vishay.com 1 1 2 3 6 5 4 g a c a c nc i179006 optocoupler, photoscr output, 400 v rm , 1 a surge current features ? turn on current (i ft ), 5.0 ma typical gate trigger current (i gt ), 20 a surge anode current, 1.0 amp blocking voltage, 400 v gate trigger voltage (v gt ), 0.6 volt isolation test voltage, 5300 v rms solid state reliability standard dip package agency approvals ul - file no. e52744 system code h or j din en 60747-5-2(vde0884) din en 60747-5-5 pending available with option 1 description the IL400 is an optically coupled scr with a gallium arsenide infrared emitter and a silicon photo scr sensor. switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. the IL400 can be used in scr triac and solid state relay applications where high blocking voltages and low input current sensitivy are required. order information for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks IL400 blocking voltage, 400 v, dip-6 IL400-x007 blocking voltage, 400 v, smd-6 (option 7) IL400-x009 blocking voltage, 400 v, smd-6 (option 9) parameter test condition symbol value unit peak reverse voltage v rm 6.0 v peak forward current (100 s, 1 % duty cycle) i fm 1.0 a forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.3 mw/c
www.vishay.com 2 document number 83626 rev. 1.4, 26-apr-04 vishay IL400 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit reverse gate voltage v rg 6.0 v anode voltage (dc or ac peak) v a 400 v anode current i a 100 ma surge anode current (10 ms duration) i as 1.0 a surge gate current (5.0 ms duration) i gs 200 ma power dissipation p diss 200 mw derate linearly from 25 c 2.11 mw/c parameter test condition symbol value unit isolation voltage v iso 5300 v rms isolation resistance v io = 500 v, t amb = 25 c r io > 10 12 ? v io = 500 v, t amb = 100 c r io > 10 12 ? total package dissipation 250 mw derate linearly from 25 2.63 mw/c operating temperature t amb - 55 to +100 c storage temperature t stg - 55 to +150 c parameter test condition symbol min ty p. max unit forward voltage i f = 20 ma v f 1.2 1.5 v reverse voltage i r = 10 av r 5.0 v reverse current v r = 5.0 v i r 10 a parameter test condition symbol min ty p. max unit forward blocking voltage r gk = 10 k ? , t a = 100 c , i d = 150 a v drm 400 v reverse blocking voltage r gk = 10 k ? , t a = 100 c , i d = 150 a v drrm 400 v on-state voltage i t = 100 ma v t 1.2 v holding current r gk = 27 k ? , v fx = 50 v i h 500 a gate trigger voltage v fx = 100 v, r gk = 27 k ? , r l = 10 k ? v gt 0.6 1.0 v forward leakage current r gk = 27 k ? , i f = 0 i d 0.2 2.0 a reverse leakage current r gk = 27 k ? , i f = 0 i r 0.2 2.0 a gate trigger current v fx = 100 v, r gk = 27 k ? , r l = 10 k ? i gt 20 50 a
vishay IL400 document number 83626 rev. 1.4, 26-apr-04 vishay semiconductors www.vishay.com 3 coupler package dimensions in inches (mm) parameter test condition symbol min ty p. max unit turn-on current v fx = 100 v i ft 0.5 5.0 10.0 ma capacitance (input-output) f = 1.0 mhz c io 2pf i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3?9 .300?.347 (7.62?8.81) 4 typ. iso method a .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
www.vishay.com 4 document number 83626 rev. 1.4, 26-apr-04 vishay IL400 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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